{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251128","patent":{"patent_number":"US-11251128","title":"Semiconductor device structure with air gap for reducing capacitive coupling","assignee":null,"inventors":[],"filing_date":"2020-02-11T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor device structure includes: a first conductive structure and a second conductive structure disposed at different vertical heights over a semiconductor substrate; a first conductive plug and a second conductive plug correspondingly disposed over the first conductive structure and the second conductive structure; a first spacer disposed on a sidewall surface of the first conductive plug; an etch stop layer disposed over the semiconductor substrate, wherein the etch stop layer adjoins the first spacer; and a first inter-layer dielectric (ILD) layer disposed over the etch stop layer and next to the first conductive plug, wherein the first ILD layer is separated from the first spacer by an air gap."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure with air gap for reducing capacitive coupling","description":"The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor device structure includes: a first conductive structure and a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251128","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251128","citation_suggestion":"Patentable. \"Semiconductor device structure with air gap for reducing capacitive coupling\" (US-11251128). https://patentable.app/patents/US-11251128","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251128","json":"https://patentable.app/api/llm-context/US-11251128","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:23:00.088Z"}