{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251140","patent":{"patent_number":"US-11251140","title":"Transient stabilized SOI FETs","assignee":null,"inventors":[],"filing_date":"2020-05-15T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same VDS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same VGS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a “trickle current” state) that keeps both VGS and VDS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transient stabilized SOI FETs","description":"Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one emb","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251140","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251140","citation_suggestion":"Patentable. \"Transient stabilized SOI FETs\" (US-11251140). https://patentable.app/patents/US-11251140","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251140","json":"https://patentable.app/api/llm-context/US-11251140","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:55:31.665Z"}