{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251183","patent":{"patent_number":"US-11251183","title":"Semiconductor arrangement having continuous spacers and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-09-30T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A semiconductor arrangement includes: a substrate; fins formed on the substrate and extending in a first direction; gate stacks formed on the substrate and each extending in a second direction crossing the first direction to intersect at least one of the fins, and dummy gates composed of a dielectric and extending in the second direction; spacers formed on sidewalls of the gate stacks and the dummy gates; and dielectric disposed between first and second ones of the gate stacks in the second direction to electrically isolate the first and second gate stacks. The dielectric is disposed in a space surrounded by respective spacers of the first and second gate stacks which extend integrally. At least a portion of an interval between the first and second gate stacks in the second direction is less than a line interval achievable by lithography in a process of manufacturing the semiconductor arrangement."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor arrangement having continuous spacers and method of manufacturing the same","description":"A semiconductor arrangement includes: a substrate; fins formed on the substrate and extending in a first direction; gate stacks formed on the substrate and each extending in a second direction crossin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251183","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251183","citation_suggestion":"Patentable. \"Semiconductor arrangement having continuous spacers and method of manufacturing the same\" (US-11251183). https://patentable.app/patents/US-11251183","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251183","json":"https://patentable.app/api/llm-context/US-11251183","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:26:08.148Z"}