{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251191","patent":{"patent_number":"US-11251191","title":"Three-dimensional memory device containing multiple size drain contact via structures and method of making same","assignee":null,"inventors":[],"filing_date":"2018-12-24T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory stack structures extending through the alternating stack, where each of the memory stack structures contains a respective memory film and a respective vertical semiconductor channel, drain regions contacting an upper end of a respective one of the vertical semiconductor channels, first contact via structures directly contacting a first subset of the drain regions and each having a first horizontal cross-sectional area, and second contact via structures directly contacting a second subset of the drain regions and each having a second horizontal cross-sectional area that is greater than the first horizontal cross-sectional area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device containing multiple size drain contact via structures and method of making same","description":"A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory stack structures extending through the alternat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251191","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251191","citation_suggestion":"Patentable. \"Three-dimensional memory device containing multiple size drain contact via structures and method of making same\" (US-11251191). https://patentable.app/patents/US-11251191","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251191","json":"https://patentable.app/api/llm-context/US-11251191","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:36:21.328Z"}