{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251194","patent":{"patent_number":"US-11251194","title":"Method of manufacturing a semiconductor device having a channel layer including a connection part and a pillar part","assignee":null,"inventors":[],"filing_date":"2019-10-29T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include a source line formed over a substrate. The semiconductor device may include a channel pattern including a connection part disposed over the source line, and pillar parts protruding from the connection part in a first direction. The semiconductor device may include a well structure protruding from the connection part in the first direction and spaced apart from the source line. The semiconductor device may include a source contact structure protruding from the source line in the first direction and passing through the connection part. The semiconductor device may include a gate stack disposed between the source contact structure and the well structure and enclosing the pillar parts over the connection part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device having a channel layer including a connection part and a pillar part","description":"A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include a source line formed over a substrate. The semiconductor device may in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251194","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251194","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device having a channel layer including a connection part and a pillar part\" (US-11251194). https://patentable.app/patents/US-11251194","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251194","json":"https://patentable.app/api/llm-context/US-11251194","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:26:05.052Z"}