{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251271","patent":{"patent_number":"US-11251271","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-09-30T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device having a semiconductor substrate that includes first to third epitaxial layers provided sequentially on a starting substrate, the third epitaxial layer forming a pn junction with the second epitaxial layer, and including a plurality of first semiconductor regions formed on a second semiconductor region. The semiconductor device further includes a plurality of trenches penetrating the first and second semiconductor regions to reach the second epitaxial layer, a plurality of gate electrodes provided in the trenches respectively via a gate insulating film, a metal film in ohmic contact with the first semiconductor regions, a first electrode electrically connected to the first semiconductor regions via the metal film, and a second electrode provided at a back surface of the starting substrate. Each of the starting substrate and the first to third epitaxial layers contains silicon carbide. The silicon carbide semiconductor device has a vacancy trap in an entire area of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A semiconductor device having a semiconductor substrate that includes first to third epitaxial layers provided sequentially on a starting substrate, the third epitaxial layer forming a pn junction wit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251271","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251271","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-11251271). https://patentable.app/patents/US-11251271","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251271","json":"https://patentable.app/api/llm-context/US-11251271","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:32:41.014Z"}