{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251273","patent":{"patent_number":"US-11251273","title":"Non-volatile memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2019-07-24T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A non-volatile memory device and its manufacturing method are provided. The method includes the following steps. A plurality of isolation structures are formed in a substrate. A first polycrystalline silicon layer is formed in the substrate and between two adjacent isolation structures. A first implantation process is performed to implant a first dopant into the first polycrystalline silicon layer and the isolation structures. A portion of each of the isolation structures is partially removed, and the remaining portion of each of the isolation structures has a substantially flat top surface. An annealing process is performed after partially removing the isolation structures to uniformly diffuse the first dopant in the first polycrystalline silicon layer. A dielectric layer is formed on the first polycrystalline silicon layer, and a second polycrystalline silicon layer is formed on the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile memory device and method for manufacturing the same","description":"A non-volatile memory device and its manufacturing method are provided. The method includes the following steps. A plurality of isolation structures are formed in a substrate. A first polycrystalline ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251273","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251273","citation_suggestion":"Patentable. \"Non-volatile memory device and method for manufacturing the same\" (US-11251273). https://patentable.app/patents/US-11251273","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251273","json":"https://patentable.app/api/llm-context/US-11251273","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:34:17.531Z"}