{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251299","patent":{"patent_number":"US-11251299","title":"Silicon carbide semiconductor device and manufacturing method of same","assignee":null,"inventors":[],"filing_date":"2018-03-28T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":15,"abstract":"A drift layer made of silicon carbide has a first conductivity type. A body region on the drift layer has a second conductivity type. A source region on the body region has the first conductivity type. A gate insulating film is on each inner wall of at least one trench. A protective layer has at least a portion below the trench, is in contact with the drift layer, and has the second conductivity type. A first low-resistance layer is in contact with the trench and the protective layer, straddles a border between the trench and the protective layer in the depth direction, has the first conductivity type, and has a higher impurity concentration than the drift layer. A second low-resistance layer is in contact with the first low-resistance layer, is away from the trench, has the first conductivity type, and has a higher impurity concentration than the first low-resistance layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and manufacturing method of same","description":"A drift layer made of silicon carbide has a first conductivity type. A body region on the drift layer has a second conductivity type. A source region on the body region has the first conductivity type","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251299","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251299","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and manufacturing method of same\" (US-11251299). https://patentable.app/patents/US-11251299","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251299","json":"https://patentable.app/api/llm-context/US-11251299","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:28:41.592Z"}