{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251300","patent":{"patent_number":"US-11251300","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-04-19T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a di","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251300","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251300","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-11251300). https://patentable.app/patents/US-11251300","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251300","json":"https://patentable.app/api/llm-context/US-11251300","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:26:05.765Z"}