{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251360","patent":{"patent_number":"US-11251360","title":"MTJ capping layer structure for improved write error rate slopes and thermal stability","assignee":null,"inventors":[],"filing_date":"2020-02-06T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":18,"abstract":"A magnetic tunnel junction (MTJ) stack structure having an enhanced write performance and thermal stability (i.e., retention) is provided which can be used as an element/component of a spin-transfer torque (STT) MRAM device. The improved write performance, particularly the write error rate slope as a function of write voltage (Vfrc) which is essential in defining the overdrive voltage needed to successfully write a bit at low write error floors, is provided by a MTJ stack structure in which a zirconium (Zr) cap layer is inserted between a MTJ capping layer and an etch stop layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MTJ capping layer structure for improved write error rate slopes and thermal stability","description":"A magnetic tunnel junction (MTJ) stack structure having an enhanced write performance and thermal stability (i.e., retention) is provided which can be used as an element/component of a spin-transfer t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251360","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251360","citation_suggestion":"Patentable. \"MTJ capping layer structure for improved write error rate slopes and thermal stability\" (US-11251360). https://patentable.app/patents/US-11251360","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251360","json":"https://patentable.app/api/llm-context/US-11251360","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:58:55.113Z"}