{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11254870","patent":{"patent_number":"US-11254870","title":"Etching solution, additive, and etching method","assignee":null,"inventors":[],"filing_date":"2020-02-07T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Etching solution, additive, and etching method","description":"According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a sili","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11254870","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11254870","citation_suggestion":"Patentable. \"Etching solution, additive, and etching method\" (US-11254870). https://patentable.app/patents/US-11254870","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11254870","json":"https://patentable.app/api/llm-context/US-11254870","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:26:14.668Z"}