{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257668","patent":{"patent_number":"US-11257668","title":"Semiconductor structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-07-01T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"The present disclosure provides a method for manufacturing a semiconductor structure. The method includes: providing a substrate includes a first region and a second region; forming a first polycrystalline silicon layer on the substrate, wherein the first polycrystalline silicon layer covers the first region and the second region; forming a stacked structure on the first polycrystalline silicon layer; forming a protective layer on the stacked structure; forming a patterned photoresist layer on the protective layer, wherein the patterned photoresist layer exposes the protective layer in the second region; removing the protective layer and the stacked structure in the second region to expose the first polycrystalline silicon layer in the second region; removing the patterned photoresist layer; and forming a second polycrystalline silicon layer on the protective layer in the first region and the first polycrystalline silicon layer in the second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method thereof","description":"The present disclosure provides a method for manufacturing a semiconductor structure. The method includes: providing a substrate includes a first region and a second region; forming a first polycrysta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257668","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257668","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method thereof\" (US-11257668). https://patentable.app/patents/US-11257668","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257668","json":"https://patentable.app/api/llm-context/US-11257668","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:42:40.990Z"}