{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257670","patent":{"patent_number":"US-11257670","title":"Method of manufacturing a semiconductor device, and associated semiconductor device and system","assignee":null,"inventors":[],"filing_date":"2020-02-10T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell that are arranged in a first direction; forming a plurality of first metal strips extending in the first direction and arranged in a second direction on a first plane; forming a first trench over a boundary between the first cell and the second cell, wherein a bottom surface of the first trench is on a second plane over the first plane; filling the first trench with a non-conductive material, resulting in a separating wall which extends in the first direction; and forming a plurality of second metal strips extending in the second direction on a third plane over the second plane, wherein a first second metal strip and a second second metal strip separated from each other by the separating wall; wherein the second direction is orthogonal to the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device, and associated semiconductor device and system","description":"A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell that are arranged in a first direction; forming a plurality of first metal s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257670","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257670","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device, and associated semiconductor device and system\" (US-11257670). https://patentable.app/patents/US-11257670","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257670","json":"https://patentable.app/api/llm-context/US-11257670","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:59:29.318Z"}