{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257676","patent":{"patent_number":"US-11257676","title":"Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-06-28T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device","description":"A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a di","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257676","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257676","citation_suggestion":"Patentable. \"Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device\" (US-11257676). https://patentable.app/patents/US-11257676","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257676","json":"https://patentable.app/api/llm-context/US-11257676","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:22:59.959Z"}