{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257720","patent":{"patent_number":"US-11257720","title":"Manufacturing method for semiconductor device and integrated semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-11-21T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A manufacturing method for a semiconductor device, and an integrated semiconductor device. The manufacturing method comprises: on a semiconductor substrate, forming an epitaxial layer having a first region, a second region, and a third region; forming at least one groove in the third region, forming at least two second doping deep traps in the first region, and forming at least two second doping deep traps in the second region; forming a first dielectric island between the second doping deep traps and forming a second dielectric island on the second doping deep traps; forming a first doping groove at both sides of the first dielectric island in the first region; forming a gate structure on the first dielectric island; forming an isolated first doping source region using the second dielectric island as a mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method for semiconductor device and integrated semiconductor device","description":"A manufacturing method for a semiconductor device, and an integrated semiconductor device. The manufacturing method comprises: on a semiconductor substrate, forming an epitaxial layer having a first r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257720","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257720","citation_suggestion":"Patentable. \"Manufacturing method for semiconductor device and integrated semiconductor device\" (US-11257720). https://patentable.app/patents/US-11257720","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257720","json":"https://patentable.app/api/llm-context/US-11257720","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:59:46.969Z"}