{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257736","patent":{"patent_number":"US-11257736","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2018-10-15T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming an isolation layer on a substrate. The isolation layer includes an opening, and a bottom of the opening exposes the substrate. The method also includes forming a fin in the opening. The fin includes a heat-dissipation region and a channel region on the heat-dissipation region. Moreover, the fin includes forming an isolation structure by removing a thickness portion of the isolation layer. A surface of the isolation structure is coplanar with a surface of the heat-dissipation region of the fin. Further, the method includes forming a channel part from the channel region by performing a thinning process to reduce a width of the channel region of the fin using the isolation structure as a mask. The heat-dissipation region of the fin forms a heat-dissipation part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming an isolation layer on a substrate. The isolation layer includes an opening,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257736","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257736","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-11257736). https://patentable.app/patents/US-11257736","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257736","json":"https://patentable.app/api/llm-context/US-11257736","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:09:59.214Z"}