{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257758","patent":{"patent_number":"US-11257758","title":"Backside connection structures for nanostructures and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2020-06-24T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","B82Y","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. A first recess cavity is formed over a gate electrode, and a second recess cavity is formed over the epitaxial semiconductor material portion. The second recess cavity is vertically recessed to form a connector via cavity. A metallic cap structure is formed on the gate electrode in the first recess cavity, and a connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Backside connection structures for nanostructures and methods of forming the same","description":"A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. A first recess ca","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257758","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257758","citation_suggestion":"Patentable. \"Backside connection structures for nanostructures and methods of forming the same\" (US-11257758). https://patentable.app/patents/US-11257758","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257758","json":"https://patentable.app/api/llm-context/US-11257758","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:58:43.703Z"}