{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257813","patent":{"patent_number":"US-11257813","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-05-27T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H02M","H02M","H02M","H02M"],"num_claims":8,"abstract":"A semiconductor device includes: semiconductor layer having surface and rear surface; insulating film formed on the surface; first and second surface electrode layers formed on the insulating film; rear electrode layer formed on the rear surface; active region set in region of the surface covered with the first surface electrode layer; capacitor region set in region of the surface covered with the second surface electrode layer; first trench formed in the active region; first insulating film formed on inner surface of the first trench; first embedded electrode embedded in the first trench and controlling ON/OFF of current flowing between the first surface electrode layer and the rear electrode layer; second trench formed in the capacitor region; second insulating film formed on inner surface of the second trench; and second embedded electrode embedded in the second trench and electrically connected to the first surface electrode layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes: semiconductor layer having surface and rear surface; insulating film formed on the surface; first and second surface electrode layers formed on the insulating film; re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257813","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257813","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11257813). https://patentable.app/patents/US-11257813","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257813","json":"https://patentable.app/api/llm-context/US-11257813","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:29:34.303Z"}