{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257815","patent":{"patent_number":"US-11257815","title":"Work function design to increase density of nanosheet devices","assignee":null,"inventors":[],"filing_date":"2020-05-15T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","B82Y"],"num_claims":20,"abstract":"In some embodiments, the present disclosure relates to an integrated chip including first, second, and third nanosheet field effect transistors (NSFETs) arranged over a substrate. The first NSFET has a first threshold voltage and includes first nanosheet channel structures embedded in a first gate electrode layer. The first nanosheet channel structures extend from a first source/drain region to a second source/drain region. The second NSFET has a second threshold voltage different than the first threshold voltage and includes second nanosheet channel structures embedded in a second gate electrode layer. The second nanosheet channel structures extend from a third source/drain region to a fourth source/drain region. The third NSFET has a third threshold voltage different than the second threshold voltage and includes third nanosheet channel structures embedded in a third gate electrode layer. The third nanosheet channel structures extend from a fifth source/drain region to a sixth source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Work function design to increase density of nanosheet devices","description":"In some embodiments, the present disclosure relates to an integrated chip including first, second, and third nanosheet field effect transistors (NSFETs) arranged over a substrate. The first NSFET has ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257815","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257815","citation_suggestion":"Patentable. \"Work function design to increase density of nanosheet devices\" (US-11257815). https://patentable.app/patents/US-11257815","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257815","json":"https://patentable.app/api/llm-context/US-11257815","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:06:12.544Z"}