{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257824","patent":{"patent_number":"US-11257824","title":"Memory device and method for forming thereof","assignee":null,"inventors":[],"filing_date":"2020-07-29T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a plurality of first memory cells in a memory region and a first cut-off transistor in a dummy region, the dummy region being adjacent to the memory region. Each of the plurality of the first memory cells includes a static random access memory (SRAM) cell. The static random access memory cell includes a first pull-down transistor and a second pull-down transistor. The plurality of the first memory cells includes a first memory cell. A first source/drain region of the first pull-down transistor in the first memory cell is electrically coupled to a first source/drain region of the first cut-off transistor and a second source/drain region of the first cut-off transistor is electrically coupled to a power supply voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device and method for forming thereof","description":"A semiconductor device includes a plurality of first memory cells in a memory region and a first cut-off transistor in a dummy region, the dummy region being adjacent to the memory region. Each of the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257824","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257824","citation_suggestion":"Patentable. \"Memory device and method for forming thereof\" (US-11257824). https://patentable.app/patents/US-11257824","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257824","json":"https://patentable.app/api/llm-context/US-11257824","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:18:46.639Z"}