{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257831","patent":{"patent_number":"US-11257831","title":"Three-dimensional memory devices and fabricating methods thereof","assignee":null,"inventors":[],"filing_date":"2020-02-21T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Embodiments of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a top selective gate cut and two structure strengthen plugs in an upper portion of the alternating dielectric stack, wherein each structure strengthen plug has a narrow support body and two enlarged connecting portions; forming a plurality of channel structures in the alternating dielectric stack; forming a plurality of gate line silts in the alternating dielectric stack, wherein each gate line slit exposes a sidewall of one enlarged connecting portion of a corresponding structure strengthen plug; transforming the alternating dielectric stack into an alternating conductive/dielectric stack; and forming a gate line slit structure in each gate line slit including an enlarged end portion connected to one enlarged connecting portion of a corresponding structure strengthen plug."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory devices and fabricating methods thereof","description":"Embodiments of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a top selective","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257831","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257831","citation_suggestion":"Patentable. \"Three-dimensional memory devices and fabricating methods thereof\" (US-11257831). https://patentable.app/patents/US-11257831","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257831","json":"https://patentable.app/api/llm-context/US-11257831","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:31:03.964Z"}