{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257906","patent":{"patent_number":"US-11257906","title":"High surface dopant concentration formation processes and structures formed thereby","assignee":null,"inventors":[],"filing_date":"2020-06-01T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments disclosed herein relate generally to forming a source/drain region with a high surface dopant concentration at an upper surface of the source/drain region, to which a conductive feature may be formed. In an embodiment, a structure includes an active area on a substrate, a dielectric layer over the active area, and a conductive feature through the dielectric layer to the active area. The active area includes a source/drain region. The source/drain region includes a surface dopant region at an upper surface of the source/drain region, and includes a remainder portion of the source/drain region having a source/drain dopant concentration. The surface dopant region includes a peak dopant concentration proximate the upper surface of the source/drain region. The peak dopant concentration is at least an order of magnitude greater than the source/drain dopant concentration. The conductive feature contacts the source/drain region at the upper surface of the source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High surface dopant concentration formation processes and structures formed thereby","description":"Embodiments disclosed herein relate generally to forming a source/drain region with a high surface dopant concentration at an upper surface of the source/drain region, to which a conductive feature ma","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257906","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257906","citation_suggestion":"Patentable. \"High surface dopant concentration formation processes and structures formed thereby\" (US-11257906). https://patentable.app/patents/US-11257906","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257906","json":"https://patentable.app/api/llm-context/US-11257906","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:04:34.076Z"}