{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257927","patent":{"patent_number":"US-11257927","title":"Semiconductor structure and forming method thereof","assignee":null,"inventors":[],"filing_date":"2020-03-13T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor structure and forming method are provided. The method includes providing a substrate, forming a gate structure over the substrate, forming a first spacer on a sidewall of the gate structure; forming an epitaxial layer on both sides of the gate structure and the first spacer, a surface of the epitaxial layer is higher than a surface of the substrate; forming a dielectric layer on the epitaxial layer and on surface of the first spacer, the dielectric layer is formed on both sides of the gate structure; after forming the dielectric layer, removing the first spacer to form a first opening between the epitaxial layer and the gate structure and between the dielectric layer and the gate structure, and in the first opening forming a second spacer that has a gap between the epitaxial layer and the gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and forming method thereof","description":"A semiconductor structure and forming method are provided. The method includes providing a substrate, forming a gate structure over the substrate, forming a first spacer on a sidewall of the gate stru","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257927","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257927","citation_suggestion":"Patentable. \"Semiconductor structure and forming method thereof\" (US-11257927). https://patentable.app/patents/US-11257927","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257927","json":"https://patentable.app/api/llm-context/US-11257927","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:44:56.931Z"}