{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257932","patent":{"patent_number":"US-11257932","title":"Fin field effect transistor device structure and method for forming the same","assignee":null,"inventors":[],"filing_date":"2020-06-12T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a fin field effect transistor device structure includes forming a fin structure over a substrate. The method also includes forming an isolation structure surrounding the fin structure. The method also includes cleaning sidewalls of the fin structure. The method also includes depositing a silicon cap layer over the fin structure. The method also includes growing an oxide layer over the silicon cap layer. The silicon cap layer is thinned after growing an oxide layer over the silicon cap layer. The method also includes forming a gate structure over the oxide layer across the fin structure. The method also includes growing a source/drain epitaxial structure beside the gate structure. The method also includes forming a contact structure electrically connected to the gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor device structure and method for forming the same","description":"A method for forming a fin field effect transistor device structure includes forming a fin structure over a substrate. The method also includes forming an isolation structure surrounding the fin struc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257932","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257932","citation_suggestion":"Patentable. \"Fin field effect transistor device structure and method for forming the same\" (US-11257932). https://patentable.app/patents/US-11257932","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257932","json":"https://patentable.app/api/llm-context/US-11257932","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:40:40.364Z"}