{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257934","patent":{"patent_number":"US-11257934","title":"Fin field-effect transistors with enhanced strain and reduced parasitic capacitance","assignee":null,"inventors":[],"filing_date":"2020-01-27T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor structure includes forming a substrate, the substrate having a first portion with a first height and second recessed portions with a second height less than the first height. The method also includes forming embedded source/drain regions disposed over top surfaces of the second recessed portions of the substrate, and forming one or more fins from a portion of the substrate disposed between the embedded source/drain regions, the one or more fins providing channels for fin field-effect transistors (FinFETs). The method further includes forming a gate stack disposed over the one or more fins, and forming inner oxide spacers disposed between the gate stack and the source/drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field-effect transistors with enhanced strain and reduced parasitic capacitance","description":"A method of forming a semiconductor structure includes forming a substrate, the substrate having a first portion with a first height and second recessed portions with a second height less than the fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257934","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257934","citation_suggestion":"Patentable. \"Fin field-effect transistors with enhanced strain and reduced parasitic capacitance\" (US-11257934). https://patentable.app/patents/US-11257934","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257934","json":"https://patentable.app/api/llm-context/US-11257934","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:28:43.263Z"}