{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257936","patent":{"patent_number":"US-11257936","title":"Method for making JFET device, JFET device and layout structure thereof","assignee":null,"inventors":[],"filing_date":"2020-08-13T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"According to some embodiments in this application, a method for making a JFET device is disclosed in the following steps: forming a substrate; performing ion implantation on the first region and the second region of the substrate to form a deep N-type well, wherein the deep N-type well is formed with at least two sub-wells region; forming a field oxide in the second region; forming a P-type well in one side of the sub-well in the deep N-type well; performing P-type ion implantation on the third region and the fourth region to respectively form a first P-type heavily doped region and a second P-type heavily doped region; and performing N-type ion implantation on the fifth region, the sixth region, and the seventh region to respectively form a first N-type heavily doped region, a second N-type heavily doped region, and a third N-type heavily doped region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for making JFET device, JFET device and layout structure thereof","description":"According to some embodiments in this application, a method for making a JFET device is disclosed in the following steps: forming a substrate; performing ion implantation on the first region and the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257936","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257936","citation_suggestion":"Patentable. \"Method for making JFET device, JFET device and layout structure thereof\" (US-11257936). https://patentable.app/patents/US-11257936","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257936","json":"https://patentable.app/api/llm-context/US-11257936","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:45:50.331Z"}