{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257941","patent":{"patent_number":"US-11257941","title":"High electron mobility transistor with doped semiconductor region in gate structure","assignee":null,"inventors":[],"filing_date":"2020-01-28T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A transistor device includes a gate fin that is a segment of a semiconductor body disposed between a pair of gate trenches formed in an upper surface of the semiconductor body, a plurality of two-dimensional charge carrier gas channels disposed at different vertical depths within the gate fin, source and drain contacts arranged on either side of the gate fin in a current flow direction of the gate fin, the source and drain contacts each being electrically connected to each one of the two-dimensional charge carrier gas channels, and a gate structure that is configured to control a conductive connection between the source and drain contacts. The gate structure includes a region of doped type III-nitride semiconductor material that covers the gate fin and extends into the gate trenches, and a conductive gate electrode formed over the region of doped type III-nitride semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High electron mobility transistor with doped semiconductor region in gate structure","description":"A transistor device includes a gate fin that is a segment of a semiconductor body disposed between a pair of gate trenches formed in an upper surface of the semiconductor body, a plurality of two-dime","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257941","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257941","citation_suggestion":"Patentable. \"High electron mobility transistor with doped semiconductor region in gate structure\" (US-11257941). https://patentable.app/patents/US-11257941","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257941","json":"https://patentable.app/api/llm-context/US-11257941","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:08:32.616Z"}