{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257945","patent":{"patent_number":"US-11257945","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-12-24T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A semiconductor device, including a first semiconductor layer of the first conductivity type formed on a semiconductor substrate, a first semiconductor region of the first conductivity type, a first base region of a second conductivity type and a first base region of a second conductivity type that are respectively selectively provided in the first semiconductor layer, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer, a second semiconductor region of the first conductivity type selectively provided in the second semiconductor layer, a trench that penetrates the second semiconductor layer and the second semiconductor region, a gate electrode provided in the trench via a gate insulating film, an interlayer insulating film provided on the gate electrode, a first electrode in contact with the second semiconductor layer and the second semiconductor region, and a second electrode provided on a back surface of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device, including a first semiconductor layer of the first conductivity type formed on a semiconductor substrate, a first semiconductor region of the first conductivity type, a first b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257945","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257945","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-11257945). https://patentable.app/patents/US-11257945","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257945","json":"https://patentable.app/api/llm-context/US-11257945","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:14:30.614Z"}