{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257946","patent":{"patent_number":"US-11257946","title":"Method of forming a power semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-01-08T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method of forming a power semiconductor device includes: arranging a control electrode at least partially on or inside a semiconductor body; forming elevated source regions in the semiconductor body by: implanting first conductivity type dopants into the semiconductor body; forming a recess mask layer covering at least areas of intended source regions; and removing portions of the semiconductor body uncovered by the recess mask layer to form the elevated source regions and recessed body regions at least partially between the source regions. A dielectric layer is formed on the semiconductor body. A contact hole mask layer is formed on the dielectric layer. Portions of the dielectric layer uncovered by the contact hole mask layer are removed to form a contact hole which is filled at least partially with a conductive material to establish an electrical contact with at least a portion of the elevated source and recessed body regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a power semiconductor device","description":"A method of forming a power semiconductor device includes: arranging a control electrode at least partially on or inside a semiconductor body; forming elevated source regions in the semiconductor body","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257946","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257946","citation_suggestion":"Patentable. \"Method of forming a power semiconductor device\" (US-11257946). https://patentable.app/patents/US-11257946","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257946","json":"https://patentable.app/api/llm-context/US-11257946","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:22:56.983Z"}