{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257949","patent":{"patent_number":"US-11257949","title":"Transistor devices and methods of forming transistor devices","assignee":null,"inventors":[],"filing_date":"2020-05-15T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"An LDMOS transistor device may be provided, including a substrate having a conductivity region arranged therein, a first isolation structure arranged within the substrate, a source region and a drain region arranged within the conductivity region, a second isolation (local isolation) structure arranged between the source region and the drain region, and a gate structure arranged at least partially within the second isolation structure. The first isolation structure may extend along at least a portion of a border of the conductivity region, and a depth of the second isolation structure may be less than a depth of the first isolation structure. In use, a channel for electron flow may be formed along at least a part of a side of the gate structure arranged within the second isolation (local isolation) structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor devices and methods of forming transistor devices","description":"An LDMOS transistor device may be provided, including a substrate having a conductivity region arranged therein, a first isolation structure arranged within the substrate, a source region and a drain ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257949","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257949","citation_suggestion":"Patentable. \"Transistor devices and methods of forming transistor devices\" (US-11257949). https://patentable.app/patents/US-11257949","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257949","json":"https://patentable.app/api/llm-context/US-11257949","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:17:17.530Z"}