{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11257966","patent":{"patent_number":"US-11257966","title":"Fabricating thin-film optoelectronic devices with added rubidium and/or cesium","assignee":null,"inventors":[],"filing_date":"2020-04-10T00:00:00.000Z","publication_date":"2022-02-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabricating thin-film optoelectronic devices with added rubidium and/or cesium","description":"A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorb","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11257966","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11257966","citation_suggestion":"Patentable. \"Fabricating thin-film optoelectronic devices with added rubidium and/or cesium\" (US-11257966). https://patentable.app/patents/US-11257966","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11257966","json":"https://patentable.app/api/llm-context/US-11257966","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:33:31.026Z"}