{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264240","patent":{"patent_number":"US-11264240","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-08-01T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor device is manufactured by implanting impurity ions in one surface of a semiconductor substrate made of silicon carbide; irradiating a region of the semiconductor substrate implanted with the impurity ions with laser light of a wavelength in the ultraviolet region; and forming, on a surface of a high-concentration impurity layer formed by irradiating with the laser light, an electrode made of metal in ohmic contact with the high-concentration impurity layer. When irradiating with the laser light, a first concentration peak of the impurity ions that exceeds a solubility limit concentration of the impurity ions in silicon carbide is formed in a surface region near the one surface of the semiconductor substrate within the high-concentration impurity layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device is manufactured by implanting impurity ions in one surface of a semiconductor substrate made of silicon carbide; irradiating a region of the semiconductor substrate implanted wi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264240","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264240","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-11264240). https://patentable.app/patents/US-11264240","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264240","json":"https://patentable.app/api/llm-context/US-11264240","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T22:29:51.840Z"}