{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264244","patent":{"patent_number":"US-11264244","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-02-18T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"After a MISFET is formed on a substrate including a semiconductor substrate, an insulating layer and a semiconductor layer, an interlayer insulating film and a first insulating film are formed on the substrate. Also, after an opening is formed in each of the first insulating film and the interlayer insulating film, a second insulating film is formed at each of a bottom portion of the opening and a side surface of the opening and also formed on an upper surface of the first insulating film. Further, each of the second insulating film formed at the bottom portion of the opening and the second insulating film formed on the upper surface of the first insulating film is removed by etching. After that, an inside of the opening is etched under a condition that each of the first insulating film and the second insulating film is less etched than the insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"After a MISFET is formed on a substrate including a semiconductor substrate, an insulating layer and a semiconductor layer, an interlayer insulating film and a first insulating film are formed on the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264244","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264244","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-11264244). https://patentable.app/patents/US-11264244","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264244","json":"https://patentable.app/api/llm-context/US-11264244","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:13:33.380Z"}