{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264265","patent":{"patent_number":"US-11264265","title":"Lift pin, and epitaxial growth apparatus and method of producing silicon epitaxial wafer using the lift pin","assignee":null,"inventors":[],"filing_date":"2017-12-19T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"Provided is a lift pin for an epitaxial growth apparatus, which can prevent the back surface of a silicon wafer from being damaged by the lift pin, reduce emission of dust due to the rubbing of the lift pin against the wall surface of a through hole in a susceptor, and prevent peeling of glassy carbon. The lift pin has a straight trunk part to be inserted through the through hole; a head part to be made to abut a silicon wafer; and a cover part covering at least a top of the head part. The straight trunk part and the head part are made of a porous body, the cover part is made of a carbon-based covering material, and at least part of voids of the porous body of the head part is filled with the cover part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lift pin, and epitaxial growth apparatus and method of producing silicon epitaxial wafer using the lift pin","description":"Provided is a lift pin for an epitaxial growth apparatus, which can prevent the back surface of a silicon wafer from being damaged by the lift pin, reduce emission of dust due to the rubbing of the li","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264265","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264265","citation_suggestion":"Patentable. \"Lift pin, and epitaxial growth apparatus and method of producing silicon epitaxial wafer using the lift pin\" (US-11264265). https://patentable.app/patents/US-11264265","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264265","json":"https://patentable.app/api/llm-context/US-11264265","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:27:59.510Z"}