{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264290","patent":{"patent_number":"US-11264290","title":"Tunnel magnetoresistive effect element and magnetic memory","assignee":null,"inventors":[],"filing_date":"2017-09-06T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":2,"abstract":"A TMR element includes a reference layer, a magnetization free layer, a tunnel barrier layer between the reference layer and the magnetization free layer, and a perpendicular magnetization inducing layer and a leakage layer stacked on a side of the magnetization free layer opposite to the tunnel barrier layer side. A magnetization direction of the reference layer is fixed along a stack direction. The perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. The leakage layer is disposed on an end portion region in an in-plane direction of the magnetization free layer. The perpendicular magnetization inducing layer is disposed on at least a central region in the in-plane direction of the magnetization free layer. A resistance value of the leakage layer along the stack direction per unit area in plane is less than that of the perpendicular magnetization inducing layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tunnel magnetoresistive effect element and magnetic memory","description":"A TMR element includes a reference layer, a magnetization free layer, a tunnel barrier layer between the reference layer and the magnetization free layer, and a perpendicular magnetization inducing la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264290","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264290","citation_suggestion":"Patentable. \"Tunnel magnetoresistive effect element and magnetic memory\" (US-11264290). https://patentable.app/patents/US-11264290","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264290","json":"https://patentable.app/api/llm-context/US-11264290","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:27:46.055Z"}