{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264328","patent":{"patent_number":"US-11264328","title":"Capping layer for improved deposition selectivity","assignee":null,"inventors":[],"filing_date":"2018-12-20T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a first capping layer on a dielectric structure over a substrate, and patterning the dielectric structure and the first capping layer to define cavities within the dielectric structure. A conductive material is formed within the cavities and a second capping layer is formed on the conductive material. An etch stop layer is formed along sidewalls and over an upper surface of the second capping layer. The etch stop layer has a first thickness over the first capping layer and a second thickness over the second capping layer. The first thickness is greater than the second thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Capping layer for improved deposition selectivity","description":"The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a first capping layer on a dielectric structure over a substrate,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264328","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264328","citation_suggestion":"Patentable. \"Capping layer for improved deposition selectivity\" (US-11264328). https://patentable.app/patents/US-11264328","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264328","json":"https://patentable.app/api/llm-context/US-11264328","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:14:51.276Z"}