{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264376","patent":{"patent_number":"US-11264376","title":"Bipolar semiconductor device and method for manufacturing such a semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-08-26T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A bipolar semiconductor device includes at least a four-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact separated from the first main side by at least a base layer of first conductivity type. A shorting layer of the first conductivity type is arranged on the second main side of the base layer. A third layer includes a patterned highly conductive material, such as metal and/or silicides, graphene, etc., and is deposited on the shorting. A fourth layer of the second conductivity type is arranged directly on the third layer, inserted between the shorting layer and the second electrical contact. This concept can be applied to any non-punch-through or punch-through reverse conducting IGBT designs, but is particularly effective for devices using thin wafers, and is also applicable to bipolar diodes in order to improve a soft recovery process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bipolar semiconductor device and method for manufacturing such a semiconductor device","description":"A bipolar semiconductor device includes at least a four-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact separated from the f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264376","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264376","citation_suggestion":"Patentable. \"Bipolar semiconductor device and method for manufacturing such a semiconductor device\" (US-11264376). https://patentable.app/patents/US-11264376","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264376","json":"https://patentable.app/api/llm-context/US-11264376","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:27:32.964Z"}