{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264379","patent":{"patent_number":"US-11264379","title":"Monolithic integration of enhancement mode and depletion mode field effect transistors","assignee":null,"inventors":[],"filing_date":"2020-08-18T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A monolithic integration of enhancement mode (E-mode) and depletion mode (D-mode) field effect transistors (FETs) comprises a compound semiconductor substrate overlaid by an epitaxial structure overlaid by source and drain electrodes. The epitaxial structure includes from bottom to top sequentially a buffer layer, a channel layer, a Schottky barrier layer, a first etch stop layer, and a first cap layer. The respective first gate metal layers of the D-mode and E-mode FET are in contact with the first etch stop layer. The D-mode and E-mode gate-sinking regions are beneath the respective first gate metal layers of the D-mode and E-mode gate electrode at least within the first etch stop layer. The first gate metal layer material of the D-mode is the same as that of the E-mode, where the first gate metal layer thickness of the E-mode is greater than that of the D-mode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Monolithic integration of enhancement mode and depletion mode field effect transistors","description":"A monolithic integration of enhancement mode (E-mode) and depletion mode (D-mode) field effect transistors (FETs) comprises a compound semiconductor substrate overlaid by an epitaxial structure overla","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264379","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264379","citation_suggestion":"Patentable. \"Monolithic integration of enhancement mode and depletion mode field effect transistors\" (US-11264379). https://patentable.app/patents/US-11264379","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264379","json":"https://patentable.app/api/llm-context/US-11264379","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:15:23.202Z"}