{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264390","patent":{"patent_number":"US-11264390","title":"Semiconductor memory device with air gaps between conductive features and method for preparing the same","assignee":null,"inventors":[],"filing_date":"2020-04-16T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present disclosure provides a semiconductor memory device with air gaps between conductive features for reducing capacitive coupling and a method for preparing the semiconductor memory device. The semiconductor memory device includes an isolation layer defining a first active region in a substrate; a first doped region positioned in the first active region; a first word line buried in a first trench adjacent to the first doped region; a high-level bit line contact positioned on the first doped region; a first air gap surrounding the high-level bit line contact; wherein the first word line comprises a lower electrode structure and an upper electrode structure on the lower electrode structure; wherein the upper electrode structure comprises: a source layer substantially covering a sidewall of the first trench; a conductive layer on the source layer; and a work-function adjustment layer disposed between the source layer and the conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device with air gaps between conductive features and method for preparing the same","description":"The present disclosure provides a semiconductor memory device with air gaps between conductive features for reducing capacitive coupling and a method for preparing the semiconductor memory device. The","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264390","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264390","citation_suggestion":"Patentable. \"Semiconductor memory device with air gaps between conductive features and method for preparing the same\" (US-11264390). https://patentable.app/patents/US-11264390","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264390","json":"https://patentable.app/api/llm-context/US-11264390","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:58:45.185Z"}