{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264396","patent":{"patent_number":"US-11264396","title":"Multi-type high voltage devices fabrication for embedded memory","assignee":null,"inventors":[],"filing_date":"2019-10-29T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"Various embodiments of the present application are directed to an IC device and associated forming methods. In some embodiments, a memory region and a logic region are integrated in a substrate. A memory cell structure is disposed on the memory region. A plurality of logic devices disposed on a plurality of logic sub-regions of the logic region. A first logic device is disposed on a first upper surface of a first logic sub-region. A second logic device is disposed on a second upper surface of a second logic sub-region. A third logic device is disposed on a third upper surface of a third logic sub-region. Heights of the first, second, and third upper surfaces of the logic sub-regions monotonically decrease. By arranging logic devices on multiple recessed positions of the substrate, design flexibility is improved and devices with multiple operation voltages are better suited."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-type high voltage devices fabrication for embedded memory","description":"Various embodiments of the present application are directed to an IC device and associated forming methods. In some embodiments, a memory region and a logic region are integrated in a substrate. A mem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264396","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264396","citation_suggestion":"Patentable. \"Multi-type high voltage devices fabrication for embedded memory\" (US-11264396). https://patentable.app/patents/US-11264396","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264396","json":"https://patentable.app/api/llm-context/US-11264396","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:46:05.625Z"}