{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264405","patent":{"patent_number":"US-11264405","title":"Semiconductor diodes employing back-side semiconductor or metal","assignee":null,"inventors":[],"filing_date":"2016-04-01T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Integrated circuit (IC) strata including one or more transistor and one or more semiconductor diode. A transistor may include one or more non-planar semiconductor bodies in which there is a channel region while the diode also includes one or more non-planar semiconductor bodies in which there is a p-type region, an n-type region, or both. One IC stratum may be only hundreds of nanometers in thickness and include both front-side and back-side interconnect levels. The front-side interconnect level is disposed over a front side of one or more of the non-planar semiconductor bodies and is coupled to at least one terminal of the transistor. The back-side interconnect level is disposed over a back side of one or more of the non-planar semiconductor bodies and is coupled to at least one terminal of the semiconductor diode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor diodes employing back-side semiconductor or metal","description":"Integrated circuit (IC) strata including one or more transistor and one or more semiconductor diode. A transistor may include one or more non-planar semiconductor bodies in which there is a channel re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264405","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264405","citation_suggestion":"Patentable. \"Semiconductor diodes employing back-side semiconductor or metal\" (US-11264405). https://patentable.app/patents/US-11264405","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264405","json":"https://patentable.app/api/llm-context/US-11264405","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:37:23.249Z"}