{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264462","patent":{"patent_number":"US-11264462","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-08-24T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"A silicon carbide semiconductor device, including a semiconductor substrate having first and second semiconductor regions and a plurality of third semiconductor regions sequentially formed therein, a plurality of trenches penetrating the second and third semiconductor regions, a plurality of gate electrodes provided in the trenches via a gate insulating film, an interlayer insulating film covering the gate electrodes, a plurality of contact holes penetrating the interlayer insulating film, a first electrode provided in the contact holes and at the surface of the interlayer insulating film, and a second electrode electrically connected to the first semiconductor region. The interlayer insulating film has a plurality of recessed parts and protruding parts, to thereby form at least three recesses and protrusions repeatedly at a surface of the interlayer insulating film. The first electrode includes first to third electrode films, the second electrode film having a shape reflecting the surface of the interlayer insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A silicon carbide semiconductor device, including a semiconductor substrate having first and second semiconductor regions and a plurality of third semiconductor regions sequentially formed therein, a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264462","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264462","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-11264462). https://patentable.app/patents/US-11264462","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264462","json":"https://patentable.app/api/llm-context/US-11264462","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:24:25.574Z"}