{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264474","patent":{"patent_number":"US-11264474","title":"Semiconductor device with boron nitride layer and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-08-18T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a pad oxide layer positioned on the substrate, a hard mask layer positioned on the pad oxide layer, an isolation layer positioned along the hard mask layer and the pad oxide layer and extending to the substrate, a first dielectric layer positioned between the substrate and the isolation layer, and a liner layer positioned on a top surface of the hard mask layer and positioned between the first dielectric layer and the isolation layer, between the pad oxide layer and the isolation layer, and between the hard mask layer and the isolation layer. The hard mask layer and the liner layer include boron nitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with boron nitride layer and method for fabricating the same","description":"The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a pad oxide layer positioned on the subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264474","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264474","citation_suggestion":"Patentable. \"Semiconductor device with boron nitride layer and method for fabricating the same\" (US-11264474). https://patentable.app/patents/US-11264474","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264474","json":"https://patentable.app/api/llm-context/US-11264474","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:05:15.436Z"}