{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264479","patent":{"patent_number":"US-11264479","title":"Process for producing FET transistors","assignee":null,"inventors":[],"filing_date":"2013-09-04T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":21,"abstract":"A method of production of a field-effect transistor from a stack of layers forming a semiconductor-on-insulator type substrate, the stack including a superficial layer of an initial thickness, made of a crystalline semiconductor material and covered with a protective layer, the method including: defining, by photolithography, a gate pattern in the protective layer; etching the gate pattern into the superficial layer to leave a thickness of the layer of semiconductor material in place, the thickness defining a height of a conduction channel of the field-effect transistor; forming a gate in the gate pattern; forming, in the superficial layer and on either side of the gate, source and drain zones, while preserving, in the zones, the initial thickness of the superficial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process for producing FET transistors","description":"A method of production of a field-effect transistor from a stack of layers forming a semiconductor-on-insulator type substrate, the stack including a superficial layer of an initial thickness, made of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264479","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264479","citation_suggestion":"Patentable. \"Process for producing FET transistors\" (US-11264479). https://patentable.app/patents/US-11264479","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264479","json":"https://patentable.app/api/llm-context/US-11264479","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:15:10.089Z"}