{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264488","patent":{"patent_number":"US-11264488","title":"Manufacturing method of semiconductor structure","assignee":null,"inventors":[],"filing_date":"2020-11-18T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"Provided is a manufacturing method of s semiconductor structure. The method includes: providing a substrate, wherein the substrate has a plurality of fin portions and at least one recessed portion, the at least one recessed portion is located between two adjacent fin portions of the plurality of fin portions and a bottom surface of the at least one recessed portion is lower than a surface of the substrate between the two of the plurality of fin portions; forming a doping layer on a sidewall of the plurality of fin portions, the surface of the substrate, and a sidewall and a bottom portion of the at least one recessed portion; and forming a dielectric layer on the doping layer. A top surface of the doping layer and a top surface of the dielectric layer are lower than a top surface of each of the plurality of fin portions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor structure","description":"Provided is a manufacturing method of s semiconductor structure. The method includes: providing a substrate, wherein the substrate has a plurality of fin portions and at least one recessed portion, th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264488","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264488","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor structure\" (US-11264488). https://patentable.app/patents/US-11264488","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264488","json":"https://patentable.app/api/llm-context/US-11264488","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:40:09.060Z"}