{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264489","patent":{"patent_number":"US-11264489","title":"Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices","assignee":null,"inventors":[],"filing_date":"2020-03-20T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Negative capacitance field-effect transistor (NCFET) and ferroelectric field-effect transistor (FE-FET) devices and methods of forming are provided. The gate dielectric stack of the NCFET and FE-FET devices includes a non-ferroelectric interfacial layer formed over the semiconductor channel, and a ferroelectric gate dielectric layer formed over the interfacial layer. The ferroelectric gate dielectric layer is formed by inserting dopant-source layers in between amorphous high-k dielectric layers and then converting the alternating sequence of dielectric layers to a ferroelectric gate dielectric layer by a post-deposition anneal (PDA). The ferroelectric gate dielectric layer has adjustable ferroelectric properties that may be varied by altering the precisely-controlled locations of the dopant-source layers using ALD/PEALD techniques. Accordingly, the methods described herein enable fabrication of stable NCFET and FE-FET FinFET devices that exhibit steep subthreshold slopes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices","description":"Negative capacitance field-effect transistor (NCFET) and ferroelectric field-effect transistor (FE-FET) devices and methods of forming are provided. The gate dielectric stack of the NCFET and FE-FET d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264489","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264489","citation_suggestion":"Patentable. \"Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices\" (US-11264489). https://patentable.app/patents/US-11264489","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264489","json":"https://patentable.app/api/llm-context/US-11264489","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:39:42.885Z"}