{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264497","patent":{"patent_number":"US-11264497","title":"LDMOS device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2019-10-18T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":6,"abstract":"Disclosed is an LDMOS device comprising a drift region formed by a selected area of a doped layer of a first conductivity type on a semiconductor substrate, a gate structure comprising a gate dielectric layer and a gate conductive layer which are sequentially formed on a surface of the doped layer of the first conductivity type, a doped self-aligned channel region of a second conductivity type, and a doped layer formed by tilted ion implantation with a first side face of the gate structure as a self-alignment condition. A method for manufacturing an LDMOS device is further disclosed. The channel length is not affected by lithography and thus can be minimized to fulfill an ultralow specific-on-resistance, and the distribution uniformity of the channel length can be improved, so that the performance uniformity of the device is improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"LDMOS device and method for manufacturing same","description":"Disclosed is an LDMOS device comprising a drift region formed by a selected area of a doped layer of a first conductivity type on a semiconductor substrate, a gate structure comprising a gate dielectr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264497","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264497","citation_suggestion":"Patentable. \"LDMOS device and method for manufacturing same\" (US-11264497). https://patentable.app/patents/US-11264497","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264497","json":"https://patentable.app/api/llm-context/US-11264497","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:36:30.571Z"}