{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264499","patent":{"patent_number":"US-11264499","title":"Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material","assignee":null,"inventors":[],"filing_date":"2019-09-16T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"One illustrative transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate and a source region and a drain region, each of which comprise an epi cavity with a bottom surface and a side surface. The transistor further includes an interface layer positioned on at least one of the side surface and the bottom surface of the epi cavity in each of the source/drain regions, wherein the interface layer comprises a non-semiconductor material and an epi semiconductor material positioned on at least an upper surface of the interface layer in the epi cavity in each of the source region and the drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material","description":"One illustrative transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate and a source region and a drain region, each of which comprise an epi cavity wi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264499","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264499","citation_suggestion":"Patentable. \"Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material\" (US-11264499). https://patentable.app/patents/US-11264499","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264499","json":"https://patentable.app/api/llm-context/US-11264499","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:30:19.905Z"}