{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264557","patent":{"patent_number":"US-11264557","title":"High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices","assignee":null,"inventors":[],"filing_date":"2017-12-30T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":7,"abstract":"A method for manufacturing a magnetic random access memory element having increased retention and low resistance area product (RA). A MgO layer is deposited to contact a magnetic free layer of the memory element. The MgO layer is deposited in a sputter deposition chamber using a DC power and a Mg target to deposit Mg. The deposition of Mg is periodically stopped and oxygen introduced into the deposition chamber. This process is repeated a desired number of times, resulting in a multi-layer structure. The resulting MgO layer provides excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices","description":"A method for manufacturing a magnetic random access memory element having increased retention and low resistance area product (RA). A MgO layer is deposited to contact a magnetic free layer of the mem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264557","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264557","citation_suggestion":"Patentable. \"High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices\" (US-11264557). https://patentable.app/patents/US-11264557","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264557","json":"https://patentable.app/api/llm-context/US-11264557","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:36:19.863Z"}