{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264562","patent":{"patent_number":"US-11264562","title":"Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-08-27T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer including at least one crystalline grain. The magnetization of the magnetoelectric multiferroic layer may be axial, canted, or in-plane. For axial or canted magnetization of the magnetoelectric multiferroic layer, a deterministic switching of the free layer may be achieved through coupling with the axial component of magnetization of the magnetoelectric multiferroic layer. Alternatively, the in-plane magnetization of the magnetoelectric multiferroic layer may be employed to induce precession of the magnetization angle of the free layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same","description":"A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264562","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264562","citation_suggestion":"Patentable. \"Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same\" (US-11264562). https://patentable.app/patents/US-11264562","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264562","json":"https://patentable.app/api/llm-context/US-11264562","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:23:36.902Z"}